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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU series is for throughhole mounting applications. Power dissipation levels up to 1.
Avalanche Current? Repetitive Avalanche Energy? TJ Breakdown Voltage Temp. D Between lead, ——— 6mm 0. S ——— ——— Repetitive rating; pulse width limited by max.
See fig. See Figure 12? Typical Output Characteristics Fig 2. Typical Output Characteristics 2. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Switching Time Test Circuit 3. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Maximum Avalanche Energy Vs. Drain Current Fig 12b. QG 12V.
Basic Gate Charge Waveform Fig 13b. Low Stray Inductance? Ground Plane? Low Leakage Inductance Current Transformer? RG VGS?
FR9024N Datasheet PDF - International Rectifier
FR9024N MOSFET. Datasheet pdf. Equivalent
даташит FR9024N PDF ( Datasheet )